Polycrystalline Diamond Pressure Sensor using Spin Coat Seeding Method
نویسندگان
چکیده
منابع مشابه
Diamond and Polycrystalline Diamond for MEMSApplications :
To date most of the MEMS devices are been based on Silicon. This is due to the technological know-how accumulated on manipulating, machining, manufacturing of Silicon. However, only very few devices involve moving parts. This is because of the rapid wear arising from high friction in these Silicon based systems. Recent tribometric experiments carried out by Gardos on Silicon and polycrystalline...
متن کاملGlitch-free X-ray absorption spectrum under high pressure obtained using nano-polycrystalline diamond anvils
Nano-polycrystalline diamond (NPD) [Irifune et al. (2003), Nature (London), 421, 599] has been used to obtain a glitch-free X-ray absorption spectrum under high pressure. In the case of conventional single-crystal diamond (SCD) anvils, glitches owing to Bragg diffraction from the anvils are superimposed on X-ray absorption spectra. The glitch has long been a serious problem for high-pressure re...
متن کاملPolycrystalline diamond films as prospective UV photocathodes
Polycrystalline diamond films grown by chemical vapor deposition have been considered recently for a number of UV detection applications. Negative electron affinity, chemical and mechanical stability and relative ease of fabrication make such films attractive candidates for effective and stable UV photoconverters. In this paper we present our study of the absolute quantum efficiency of a thin f...
متن کاملNanocrystal seeding: A low temperature route to polycrystalline Si films
A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540-575 “C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei (“sceds’“,L The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a...
متن کاملSurface Zeta Potential and Diamond Seeding on Gallium Nitride Films
The measurement of ζ potential of Ga-face and N-face gallium nitride has been carried out as a function of pH. Both of the faces show negative ζ potential in the pH range 5.5−9. The Ga-face has an isoelectric point at pH 5.5. The Nface shows a more negative ζ potential due to larger concentration of adsorbed oxygen. The ζ potential data clearly showed that H-terminated diamond seed solution at ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEJ Transactions on Sensors and Micromachines
سال: 2007
ISSN: 1341-8939,1347-5525
DOI: 10.1541/ieejsmas.127.96